Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
The present invention relates generally to integrated circuit (IC) fabrication equipment. More particularly, the present invention relates to an attenuated phase shift mask and a method of manufacturing an attenuated phase shift mask. An attenuated phase shift mask utilizes a multilayer which has be...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates generally to integrated circuit (IC) fabrication equipment. More particularly, the present invention relates to an attenuated phase shift mask and a method of manufacturing an attenuated phase shift mask.
An attenuated phase shift mask utilizes a multilayer which has been locally modified. Heat treatment or e-beam treatment can locally modify the multilayer to provide different reflective characteristics. The attenuated phase shift mask can be utilized in EUV applications. |
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