Semiconductor device and method of manufacturing the same

The invention relates to a semiconductor device comprising a semiconductor body which is provided at a surface with a non-volatile memory cell. A semiconductor device includes a semiconductor body () which is provided at a surface () with a non-volatile memory cell comprising a source () and a drain (), and an access gate () which is electrically insulated from a gate structure () comprising a control gate (), the gate structure () being electrically insulated from the semiconductor body () by a gate dielectric (). The gate dielectric () is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate () has a substantially flat surface portion () extending substantially parallel to the surface () of the semiconductor body () and has the shape of a block which is disposed against the gate structure () without overlapping the gate structure ().