Method for fabricating a semiconductor device

The present invention is generally related to semiconductor device fabrication, and, more particularly, the present invention is related to method for removing crystal defects in a doped dielectric surface and improving surface planarity using plasma etching. A method for making a semiconductor device is provided. The method allows for depositing a layer of a doped dielectric. The method further allows for executing plasma etching so that one or more etchant gases flow over the layer of doped dielectric. A redepositing step allows for redepositing another layer of doped dielectric over the plasma etched layer. The present invention enables to remove crystal defects that may be present in the doped dielectric surface and improve surface planarity.