Method to form the ring shape contact to cathode on wafer edge for electroplating in the bump process when using the negative type dry film photoresist

The present invention relates generally to semiconductor fabrication and more specifically to a method of forming a ring shaped electrode contact for wafer electroplating. A method of clearing photoresist on a wafer edge, including the following steps. A wafer having a upper exposed conductive layer is provided. The wafer having a center, an edge and a ring-shaped area proximate the wafer edge. A photoresist layer is formed upon the exposed conductive layer. The photoresist layer is removed from within the ring-shaped area by a rinse process to expose the conductive layer within the ring-shaped area. An oxygen diffusion barrier layer is formed over the photoresist layer.