Magnetic random access memory having a vertical write line

The present invention relates generally to semiconductor devices and more particularly to a magnetic random access memory (MRAM) device. A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess....

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Lage, Craig S
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!