Magnetic random access memory having a vertical write line
The present invention relates generally to semiconductor devices and more particularly to a magnetic random access memory (MRAM) device. A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess....
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| creator | Lage, Craig S |
| description | The present invention relates generally to semiconductor devices and more particularly to a magnetic random access memory (MRAM) device.
A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved. |
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A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6621730$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6621730$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lage, Craig S</creatorcontrib><creatorcontrib>Motorola, Inc</creatorcontrib><title>Magnetic random access memory having a vertical write line</title><description>The present invention relates generally to semiconductor devices and more particularly to a magnetic random access memory (MRAM) device.
A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZLDyTUzPSy3JTFYoSsxLyc9VSExOTi0uVshNzc0vqlTISCzLzEtXSFQoSy0CKkrMUSgvyixJVcjJzEvlYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpQEOBlIGZmZGhubGBMRFKADSoL8A</recordid><startdate>20030916</startdate><enddate>20030916</enddate><creator>Lage, Craig S</creator><scope>EFH</scope></search><sort><creationdate>20030916</creationdate><title>Magnetic random access memory having a vertical write line</title><author>Lage, Craig S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066217303</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Lage, Craig S</creatorcontrib><creatorcontrib>Motorola, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lage, Craig S</au><aucorp>Motorola, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic random access memory having a vertical write line</title><date>2003-09-16</date><risdate>2003</risdate><abstract>The present invention relates generally to semiconductor devices and more particularly to a magnetic random access memory (MRAM) device.
A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Magnetic random access memory having a vertical write line |
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