Procedure and device for specific particle manipulation and deposition

This invention relates to a procedure and device for the specific manipulation and/or deposition of microscopic particles in high-frequency plasma. A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.