Nonvolatile memory device and fabricating method thereof

1. Field of the Invention A nonvolatile memory device includes two metal layers, which act respectively as a floating gate and a control gate, and each of which has a downwardly extended portion. Thereby, a surface area per fixed unit cell area is increased, or alternatively a unit cell area per fix...

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Bibliographische Detailangaben
1. Verfasser: Lee, Da Soon
Format: Patent
Sprache:eng
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Zusammenfassung:1. Field of the Invention A nonvolatile memory device includes two metal layers, which act respectively as a floating gate and a control gate, and each of which has a downwardly extended portion. Thereby, a surface area per fixed unit cell area is increased, or alternatively a unit cell area per fixed surface area is reduced. Therefore, the nonvolatile memory device has enhanced programming and erasing properties and also improved reliability. Furthermore, a method for forming the nonvolatile memory device is provided with simplified processes.