Method of forming a carbon doped oxide layer on a substrate
The present invention relates to a method of forming a carbon doped oxide layer on a substrate, e.g., a substrate used to make a semiconductor device. A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition appara...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to a method of forming a carbon doped oxide layer on a substrate, e.g., a substrate used to make a semiconductor device.
A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate. |
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