Schottky diode with bump electrodes

The present invention relates to a semiconductor device and a manufacturing method thereof. In particular, the present invention relates to an effective technique to be applied to make the outer shape of a semiconductor device smaller and thinner. The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p-type conductive type, after a hyper-abrupt pn junction of a p-type diffusion layer, an n-type hyper-abrupt layer, an n-epitaxial layer, an n-type low resistance layer and an n-type diffusion layer is formed, an anode electrode is formed on the top of the p-type diffusion layer and a cathode electrode is formed on the top of the n-type diffusion layer. Thereafter, electrode bumps are formed on the top of the anode electrode and the cathode electrode to thereby manufacture a small diode that can be facedown bonded onto a mounting board.