Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration

The present invention is generally related to semiconductor devices and, more particularly, to the design of metal contacts and interconnections for semiconductor integrated circuits to eliminate electromigration failure. The invention also relates to providing various processes for obtaining the designed structure. An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of refractory metal. The aluminum and refractory metal segments are aligned with respect to each other to ensure electrical continuity and to force the electrical current to sequentially cross the aluminum and the refractory metal segments. The above structure can be advantageously enhanced by adding an underlayer, an overlayer or both, all of which are made of refractory metal. The interconnection wire structure described above can be expanded to include vias or studs linking interconnection lines placed at different levels of the IC chip.