Method for double-layer implementation of metal options in an integrated chip for efficient silicon debug

1. Field of the Invention In one aspect of the present invention, a method provides a connecting path diversion through an upper layer of an integrated circuit by alteration of a connecting path through a lower layer of the integrated circuit. This method enables a circuit path in an integrated circ...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yuan, Xuejun, Jin, Xiaowei, Pyapali, Rambabu, Heald, Raymond A, Kaku, James M, Dunn, Helen, Taylor, Thelma C, Lai, Peter F, Ostrer, Aharon
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:1. Field of the Invention In one aspect of the present invention, a method provides a connecting path diversion through an upper layer of an integrated circuit by alteration of a connecting path through a lower layer of the integrated circuit. This method enables a circuit path in an integrated circuit to be modified in an accessible layer for testing before the modified circuit path is incorporated in a redesigned integrated circuit design.In another aspect of the present invention, a modified multi-layer integrated circuit chip includes a connecting path formed in a lower layer and a substitute connecting path that is etched in the lower layer. Subsequently, the connecting path formed in the lower layer may be severed.