Forming of quantum dots
The present invention relates to the manufacturing of "quantum dots" of a first material in a second semiconductor material. More specifically, the present invention relates to the forming of quantum dots in a silicon substrate. A method of forming, on a single-crystal semiconductor substr...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to the manufacturing of "quantum dots" of a first material in a second semiconductor material. More specifically, the present invention relates to the forming of quantum dots in a silicon substrate.
A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate. |
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