Interleaved memory device for burst type access in synchronous read mode with the two semi-arrays independently readable in random access asynchronous mode

The present invention relates in general to memory devices, and, in particular, to an interleaved memory readable in a synchronous mode by successive locations with a sequential type of access commonly referred to as burst mode, and to a standard memory read in a random access asynchronous mode with...

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Hauptverfasser:	Campanale, Fabrizio, Nicosia, Salvatore, Tomaiuolo, Francesco, De Ambroggi, Luca Giuseppe, Kumar, Promod, Pascucci, Luigi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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