High resistivity film for 4T SRAM

The present invention is directed, in general, to semiconductor devices and, more specifically, to a semiconductor device having a high resistivity silicon carbide film for use with a four transistor static random access memory (4T SRAM). The present invention provides a method of manufacturing a resistor for use in a memory element and a semiconductor device employing the resistor. The method of manufacturing may comprise forming a dielectric layer over an active region of a semiconductor wafer and forming a resistive layer on the dielectric layer. The resistive layer comprises a compound wherein a first element of the compound is a Group III or Group IV element and a second element of the compound is a Group IV or Group V element. The method further comprises connecting an electrical interconnect structure to the resistive layer that electrically connects the resistive layer to the active region.