Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate

In general, the present invention relates to a dynamic random-access memory, such as a DRAM. More particularly, the present invention relates to a semiconductor device having a configuration comprising a DRAM and other semiconductor elements, such as a logic circuit. Capacitors are stretched over a...

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Bibliographische Detailangaben

Hauptverfasser:	Kanai, Misuzu, Ohji, Yuzuru, Fukuda, Takuya, Iijima, Shinpei, Furukawa, Ryouichi, Sugawara, Yasuhiro, Yahata, Hideharu
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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