Method for improving performance of organic semiconductors in bottom electrode structure

The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film...

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Hauptverfasser: Dimitrakopoulos, Christos Dimitrios, Kymissis, Ioannis, Purushothaman, Sampath
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film field effect transistor including the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.