Polycrystalline silicon thin film transistor and manufacturing method thereof

This application claims the benefit of Korean Patent Application No. 1999-09220, filed on Mar. 18, 1999, under 35 U.S.C. § 119, the entirety of which is hereby incorporated by reference. The present invention discloses a polycrystalline silicon thin film transistor connected to a gate line and a data line that includes a source electrode contacting the data line; a gate electrode contacting the gate line; a drain electrode spaced apart from the source electrode; a polysilicon layer positioned between and contacting the source and the drain electrodes, and acting as a channel area in which electrons flow; at least one metal layer positioned near the polysilicon layer and parallel to a flow direction of the electrons; and a buffer layer interposed between the metal layer and the polysilicon layer.