Erbium doped fibers for extended L-band amplification
This invention relates to erbium-doped fibers for photonic devices, and more particularly to erbium-doped fiber amplifiers (EDFA) operating in the L-band. The specification describes rare earth doped fiber amplifier devices for operation in the extended L-band, i.e. at wavelengths from 1565 nm to ab...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | This invention relates to erbium-doped fibers for photonic devices, and more particularly to erbium-doped fiber amplifiers (EDFA) operating in the L-band.
The specification describes rare earth doped fiber amplifier devices for operation in the extended L-band, i.e. at wavelengths from 1565 nm to above 1610 nm. High efficiency and flat gain spectra are obtained using a high silica based fiber codoped with Er, Al, Ge, and P and an NA of at least 0.15. |
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