Method of forming a recessed polysilicon filled trench
The present invention relates to the field of semiconductor fabrication; more specifically, it relates to a method for forming recessed polysilicon contacts in semiconductor devices. A method of forming a recessed polysilicon contact is provided. The method includes: forming a trench in a substrate;...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to the field of semiconductor fabrication; more specifically, it relates to a method for forming recessed polysilicon contacts in semiconductor devices.
A method of forming a recessed polysilicon contact is provided. The method includes: forming a trench in a substrate; overfilling the trench with polysilicon; removing the polysilicon outside of the trench to provide a substantially planar surface; oxidizing the surface of the polysilicon in the trench using plasma oxidation; and removing an upper portion of the polysilicon from the trench. |
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