Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor

The present invention relates to electrode and barrier materials for semiconductor memory devices or thin film capacitors containing ferroelectric or high-epsilon dielectric materials and in particular, to a method for patterning a lower electrode including a noble metal and multilayer barrier films. A process for forming a multilayer film stack including a noble metal electrode and a multilayer barrier. The process includes exposing the film stack to a plasma formed of reactive species from an excitable gas mixture of argon, a chlorine bearing gas, a fluorine bearing gas and a carbon bearing gas. The method of forming the lower electrode of a capacitor includes simultaneously etching a multilayer barrier and an electrode layer.