Wet clean of organic silicate glass films

The invention is generally related to the field of forming interconnect layers in semiconductor devices and more specifically to interconnect layers having organic silicate glass dielectric films. A post-etch clean up process for OSG. After the trench ()/via () etch in a dual damascene process, a we...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Eissa, Mona M, Yocum, Troy A
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!