Wet clean of organic silicate glass films

The invention is generally related to the field of forming interconnect layers in semiconductor devices and more specifically to interconnect layers having organic silicate glass dielectric films. A post-etch clean up process for OSG. After the trench ()/via () etch in a dual damascene process, a wet chemistry comprising HF and HOis used to remove residues without etching or damaging the OSG film in the ILD () or IMD ().