Magnetic random access memory

The present invention relates to a magnetic random access memory (abbreviated as 'MRAM'), and in particular to an improved MRAM having a higher speed than an SRAM, integration density as high as a DRAM, and a property of a nonvolatile memory such as a flash memory. A magnetic random access memory (MRAM) is disclosed. In order to achieve high integration, the MRAM includes a word line formed in an active region of a semiconductor substrate, and used as a read line and a write line; a ground line and a lower read layer positioned on opposite sides of the active region of the semiconductor substrate; a seed layer contacting the lower read layer, and being overlapped with the upper portion of the word line; an MTJ cell contacting the upper portion of the seed layer at the upper portion of the word line; and a bit line contacting the MTJ cell, and crossing the word line in a vertical direction.