Method and apparatus for adjusting on-chip current reference for EEPROM sensing

1. Field of the Invention Method and apparatus for a memory circuit having a sense amplifier circuit having a sensing amplifier connected to read the data content output of a memory cell where the sense amplifier circuit includes a current source transistor having a gate terminal and having a drain...

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Bibliographische Detailangaben
Hauptverfasser: Hollmer, Shane C, Pawletko, Joseph G, Le, Binh Quang
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:1. Field of the Invention Method and apparatus for a memory circuit having a sense amplifier circuit having a sensing amplifier connected to read the data content output of a memory cell where the sense amplifier circuit includes a current source transistor having a gate terminal and having a drain terminal connected to a voltage supply and having a source terminal connected to the sensing amplifier, with a selectable source current in order to account for variation from a desired source current due to variations in the designed source current transistor performance parameters.