Hybrid porous low-K dielectrics for integrated circuits

The invention is generally related to the field of pre- and inter-metal dielectric films used in integrated circuits and more specifically to porous low-k dielectric films. An organically modified dielectric network structure () and solid halide-containing material () are co-deposited using a chemical vapor deposition process. The solid halide-containing material () is then sublimated leaving a porous dielectric (). An encapsulating layer () is formed over the porous dielectric () to seal any remaining halide-containing material Within the porous dielectric ().