Power MOSFET device, structures employing the same and methods of fabrication

The present invention relates generally to semiconductor devices, and more particularly, to a semiconductor device having a vertical MOSFET (metal oxide-semiconductor field-effect transistor) structure. A semiconductor device, full bridge converter employing the same, and methods of fabrication thereof are provided. The device includes a vertical MOSFET having a parasitic body diode at a junction face between a body region and a semiconductor layer thereof. The parasitic body diode is suppressed by having no direct electrical connection to the body region, resulting in the parasitic body diode being open-circuited within the MOSFET. Co-packaged with the MOSFET is a separate bypass diode connected across a source and a drain of the MOSFET. The bypass diode functions to clamp the voltage across the MOSFET without employing the parasitic, electrically isolated body diode of the MOSFET.