Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound

The present invention relates to precursor compounds useful for depositing alumina films used as a dielectric material in semiconductor devices, processes for preparing the compounds, and methods for vapor deposition of metallic films on silicon substrates using the compounds. More specifically, the present invention relates to compounds for forming alumina films upon adhesive layers or diffusion-preventive layers formed on substrates such as silicon substrates, processes for preparing the compounds, and methods for vapor deposition of metal oxide films. Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compound and methods of forming aluminum films. The compounds are selected from R′R″R′″Al:Lwherein R′, R″, R′″ are independently selected from alkyl, perfluroalkyl or alkoxy or borate. L is one or more organic Lewis bases selected from thiophene, thriopyran and, or as defined in the instant specification.