Semiconductor wafer and production method therefor

The present invention relates to a method for producing a semiconductor wafer, in particular, a single crystal silicon wafer. A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.