Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer

The invention relates to semiconductor devices and components and, specifically, to methods for forming gate dielectrics for semiconductor devices and components. A process for forming a metal oxide or a metal silicate gate dielectric layer on a semiconductor substrate is disclosed. A suitably prepared substrate is placed in a chamber. An organic precursor gas is flowed into the chamber. An inorganic precursor gas is then flowed into the chamber. The organic precursor gas catalyzes a reaction between itself, the inorganic precursor and the substrate to form a dielectric layer on the substrate.