High-frequency semiconductor laser module
The invention is directed to a high-frequency semiconductor laser module according to the preamble of claim . The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two...
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| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The invention is directed to a high-frequency semiconductor laser module according to the preamble of claim
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The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two lines for the H-F feed, one of which is insulated from the silicon substrate by a dielectric layer. According to the invention, the laser diode is arranged on the silicon substrate via a metallic mounting layer, and the H-F line is guided close to the laser diode on the dielectric layer. |
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