Arrangement and method for using electron channeling patterns to detect substrate damage

The invention relates to semiconductor device assemblies, and more particularly to techniques for analyzing substrate associated with an integrated circuit. According to one aspect of the disclosure, a method for detecting a degree of substrate damage in an integrated circuit die is provided. In one example embodiment, the back side of the die is thinned and an examination region is exposed. An electron beam is used to scan the region, and backscattered electrons are detected in response. The detected backscattered electrons are used to provide an electron channeling pattern for the scanned region. The electron channeling pattern is then compared to a reference pattern and used to determine a degree of substrate damage.