Heat treating method for thin film and forming method for thin film
The present invention relates to a heat treatment method for heat treating and depositing a thin film used for a gate electrode and wiring of a semi-conductor device. A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, c...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to a heat treatment method for heat treating and depositing a thin film used for a gate electrode and wiring of a semi-conductor device.
A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, comprising a heating step, a temperature keeping step and a cooling step. Among these steps, the thin film is heated in an atmosphere of gas which is oxidizing gas or includes oxidizing gas at least in the heating step. An oxide film is formed on the thin film in the heating step to prevent the phosphorous atoms from escaping. |
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