High performance poly-si1−xgex thin film transistor and a method of fabricating such a thin film transistor
1. Field of the Invention The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-SiGealloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-SiGeall...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | 1. Field of the Invention
The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-SiGealloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-SiGealloy material and the gate, and a method for fabricating such a high-performance thin film transistor. |
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