Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same
The invention relates in general to integrated circuits with thin film resistors. A first thin film resistor formed by direct etch or lift off on a first dielectric layer that covers an integrated circuit in a substrate. A second thin film resistor comprised of a different material than the first re...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The invention relates in general to integrated circuits with thin film resistors.
A first thin film resistor formed by direct etch or lift off on a first dielectric layer that covers an integrated circuit in a substrate. A second thin film resistor comprised of a different material than the first resistor, formed by direct etch or lift off on the first dielectric layer or on a second dielectric layer over the first dielectric layer. The first and second thin film resistors are interconnected with another electronic device such as other resistors or the integrated circuit. |
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