Method for making a carbon doped oxide dielectric material

The present invention relates to a method for making a dielectric material, in particular, a method for making a carbon doped oxide using an alkyl oxysilane precursor. A method of forming a carbon doped oxide dielectric material on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus an alkyl oxysilane precursor. That apparatus is then operated under conditions that cause a carbon doped oxide to form on the substrate, while maintaining the substrate temperature at less than about 200° C.