Microfabricated structures with trench-isolation using bonded-substrates and cavities

1. Field of the Invention A microstructure and method for forming the microstructure are disclosed. The method includes: providing a handle substrate; providing a device substrate in which high-aspect-ratio structures and optional integrated circuitry will be fabricated; forming one or more filled i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Clark, William A, Lemkin, Mark A, Juneau, Thor N, Roessig, Allen W
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:1. Field of the Invention A microstructure and method for forming the microstructure are disclosed. The method includes: providing a handle substrate; providing a device substrate in which high-aspect-ratio structures and optional integrated circuitry will be fabricated; forming one or more filled isolation trenches within a recessed cavity on a first surface of the device substrate or alternatively forming one or more filled isolation trenches on a first surface of the device substrate and forming a recessed cavity on a first surface of the handle substrate; bonding the first surface of the device substrate to the first surface of the handle substrate; removing a substantially uniform amount of material from the second surface of the device substrate to expose at least one isolation trench; optionally forming circuits and interconnection on a second surface of the device substrate; and etching a set of features in the second surface of the device substrate to complete the definition of electrically isolated structural elements.The micromechanical device includes: a device substrate having a first surface, a second surface, and a semiconductor layer; a handle substrate, the first surface of the device substrate bonded to the handle substrate; one or more first trenches formed in the device substrate, the first trenches extending from the second surface of the device substrate through the device substrate towards the handle substrate; a dielectric within the first trenches; one or more cavities disposed below the second surface of the device layer, a cavity enclosing a portion of at least one trench; at least one second trench formed in the second surface of the device substrate, the second trench completing definition of one or more micromechanical devices.