Manufacture of semiconductor device using A-C anti-reflection coating

a) Field of the Invention A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I=I /Ito 0.2 or smaller, where Iis an average value of light intensity in the photoresist film, and I is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.