Semiconductor integrated circuit device

The present invention relates to a semiconductor integrated circuit device, and, more particularly, the invention relates to improvements in a power supply circuit for a dynamic RAM (random access memory), including peripheral circuits and bonding pads disposed in a central portion of a semiconductor chips and power supply circuits for stepping down a source voltage supplied from an external terminal and for supplying stepped-down voltages to the peripheral circuits and the like. In a semiconductor integrated circuit device which comprises a first interconnect channel including a plurality of second-layer metal interconnect layers extended in a first direction over a semiconductor chip, a second interconnect channel including a plurality of third-layer metal interconnect layers extended in a second direction perpendicular to the first direction, an internal power supply circuit which receives a source voltage supplied from an external terminal and generates a voltage different from the source voltage, and which is provided with stabilizing capacitors, a large part of the stabilizing capacitors are in an area in which the second- and third-layer metal interconnect lines intersect each other.