Method of forming a vacuum micro-electronic device

The present invention relates, in general, to electronics, and more particularly, to vacuum microelectronic devices. A vacuum microelectronic device () is formed by applying a first conductor () to a substrate () and utilizing the first conductor () to expose a dielectric material () and a second conductive material () from a back surface of the substrate (). A second conductor () and a dielectric () are formed from the second conductive material () and the dielectric material (), respectively. This method self-aligns the dielectric () and the second conductor () with the first conductor (). Electron emitters () of the vacuum microelectronic device () are formed on the first conductor ().