Method of forming resistive contacts on intergrated circuits with mobility spoiling ions including high resistive contacts and low resistivity silicide contacts

This invention relates to the insertion of resistors in integrated-circuit memory or logic, specifically as related to semiconductor contacts. A semiconductor device or integrated circuit has high and low resistive contacts. Mobility spoiling species such as carbon or oxygen are implanted into all contacts. The high resistive contacts are covered with a barrier metal to protect silicide from chemical interaction with the interconnect metalization (aluminum) in the low-resistance contacts. Selective silicide formation converts some of the contacts back to low-resistance contacts.