Copper seed layer repair technique using electroless touch-up

This invention relates to semiconductor integrated circuit (IC) manufacturing, and more particularly to, copper metallization deposition techniques in dual damascene IC structures. An electroless touch-up process for repairing copper metallization deposited in dual damascene structures with high aspect ratios. An initial copper strike layer is produced by directional deposition techniques such that discontinuous sidewall coverage occurs. An evolutionary electroless touch-up process then proceeds to conformally grow the copper layer on all surfaces. The result of the evolutionary process is to produce a continuous copper strike layer that can be used with conventional electroplating techniques.