Method of controlling and improving SOG etchback etcher

(1) Field of the Invention A new method for improving particle level, stability of etch rate, and better etch uniformity by using a dry plasma clean to remove polymer buildup from the upper electrode and walls of an etch chamber after spin-on-glass etchback is described. An etching chamber having a lower electrode, upper electrode, and interior walls is provided. Spin-on-glass etchback is performed within the etching chamber whereby a polymer buildup forms on surfaces of chamber. A dummy wafer is placed into the etching chamber and the polymer buildup within the chamber is removed using a dry plasma cleaning process.