Semiconductor and method of fabricating
The present invention is concerned with a semiconductor structure and method of fabricating. More particularly, the present invention is concerned with eliminating potential drop across a semiconductor wafer that typically occurs during processing. According to the present invention, a sacrificial o...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The present invention is concerned with a semiconductor structure and method of fabricating. More particularly, the present invention is concerned with eliminating potential drop across a semiconductor wafer that typically occurs during processing. According to the present invention, a sacrificial or removable conductive strap is coupled to the semiconductor substrate and conductor where desired, for maintaining a common voltage between the conductor and substrate.
Provided is a semiconductor structure that comprises a substrate; a conductor; and insulating layer separating the conductor from the substrate; and a removable conductive strap coupled to the conductor and the substrate for maintaining a common voltage between the conductor and substrate during ion beam and/or plasma processing; and a method for fabricating. |
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