Method for fabricating titanium silicide film
1. Field of the Invention A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH-gas plasma process or an N-gas plasma process is conducted for several times to minimize etching of the silicon substrate and c...
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| creator | Lee, Yoon-Jik |
| description | 1. Field of the Invention
A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH-gas plasma process or an N-gas plasma process is conducted for several times to minimize etching of the silicon substrate and consumption of a dopant of an impurity layer, thereby restraining a leakage current from increasing. The method for fabricating a titanium silicide film includes the steps of: (a) depositing a titanium silicide film as thick as {fraction (1/n)} of a total desired thickness on a silicon substrate by using the Chemical Vapor Deposition method; (b) processing the titanium silicide film with a nitrogen-gas plasma or ammonia-gas plasma; and (c) repeatedly performing step (a) and step (b) n times. |
| format | Patent |
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A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH-gas plasma process or an N-gas plasma process is conducted for several times to minimize etching of the silicon substrate and consumption of a dopant of an impurity layer, thereby restraining a leakage current from increasing. The method for fabricating a titanium silicide film includes the steps of: (a) depositing a titanium silicide film as thick as {fraction (1/n)} of a total desired thickness on a silicon substrate by using the Chemical Vapor Deposition method; (b) processing the titanium silicide film with a nitrogen-gas plasma or ammonia-gas plasma; and (c) repeatedly performing step (a) and step (b) n times.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6387799$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6387799$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lee, Yoon-Jik</creatorcontrib><creatorcontrib>Hyundai Electronics Industries Co., Ltd</creatorcontrib><title>Method for fabricating titanium silicide film</title><description>1. Field of the Invention
A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH-gas plasma process or an N-gas plasma process is conducted for several times to minimize etching of the silicon substrate and consumption of a dopant of an impurity layer, thereby restraining a leakage current from increasing. The method for fabricating a titanium silicide film includes the steps of: (a) depositing a titanium silicide film as thick as {fraction (1/n)} of a total desired thickness on a silicon substrate by using the Chemical Vapor Deposition method; (b) processing the titanium silicide film with a nitrogen-gas plasma or ammonia-gas plasma; and (c) repeatedly performing step (a) and step (b) n times.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZND1TS3JyE9RSMsvUkhLTCrKTE4sycxLVyjJLEnMyyzNVSjOzMlMzkxJVUjLzMnlYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDM2MLc3NLSmAglAKUoKz8</recordid><startdate>20020514</startdate><enddate>20020514</enddate><creator>Lee, Yoon-Jik</creator><scope>EFH</scope></search><sort><creationdate>20020514</creationdate><title>Method for fabricating titanium silicide film</title><author>Lee, Yoon-Jik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_063877993</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Lee, Yoon-Jik</creatorcontrib><creatorcontrib>Hyundai Electronics Industries Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Yoon-Jik</au><aucorp>Hyundai Electronics Industries Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for fabricating titanium silicide film</title><date>2002-05-14</date><risdate>2002</risdate><abstract>1. Field of the Invention
A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH-gas plasma process or an N-gas plasma process is conducted for several times to minimize etching of the silicon substrate and consumption of a dopant of an impurity layer, thereby restraining a leakage current from increasing. The method for fabricating a titanium silicide film includes the steps of: (a) depositing a titanium silicide film as thick as {fraction (1/n)} of a total desired thickness on a silicon substrate by using the Chemical Vapor Deposition method; (b) processing the titanium silicide film with a nitrogen-gas plasma or ammonia-gas plasma; and (c) repeatedly performing step (a) and step (b) n times.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method for fabricating titanium silicide film |
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