Method for fabricating titanium silicide film

1. Field of the Invention A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH-gas plasma process or an N-gas plasma process is conducted for several times to minimize etching of the silicon substrate and consumption of a dopant of an impurity layer, thereby restraining a leakage current from increasing. The method for fabricating a titanium silicide film includes the steps of: (a) depositing a titanium silicide film as thick as {fraction (1/n)} of a total desired thickness on a silicon substrate by using the Chemical Vapor Deposition method; (b) processing the titanium silicide film with a nitrogen-gas plasma or ammonia-gas plasma; and (c) repeatedly performing step (a) and step (b) n times.