Process for resist clean up of metal structures on polyimide

The present invention generally relates to fabrication of metallic structures on a substrate and, more particularly, to a process for removing a resist film containing chlorine residue without affecting an underlying organic structure. A process for removing a resist material containing a chlorine r...

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Bibliographische Detailangaben
Hauptverfasser: Volant, Richard P, Kocis, Joseph T, Kocon, Waldemar W, Subbanna, Seshadri
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention generally relates to fabrication of metallic structures on a substrate and, more particularly, to a process for removing a resist film containing chlorine residue without affecting an underlying organic structure. A process for removing a resist material containing a chlorine residue from an organic substrate. The process first removes the chlorine residue from the resist material by exposing the resist material to an abbreviated plasma which also removes a portion of the resist material. The remainder of the resist material is removed by exposing the resist material to a solvent which does not affect the organic substrate.