Embedded high-contrast distributed grating structures

The present invention relates generally to new methods of semiconductor device fabrication, and more particularly to methods to fabricate high-contrast distributed grating structures and semiconductor devices comprising such structures. A new class of fabrication methods for embedded distributed grating structures is claimed, together with optical devices which include such structures. These new methods are the only known approach to making defect-free high-dielectric contrast grating structures, which are smaller and more efficient than are conventional grating structures.