Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS

The invention relates to half bridge driver integrated circuits. More particularly, this invention relates to the preparation of a high voltage half bridge integrated circuit with level shifting input control where all complementary metal oxide semiconductor (CMOS) components have been replaced with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yushan, Li, Wong, Stephen L
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention relates to half bridge driver integrated circuits. More particularly, this invention relates to the preparation of a high voltage half bridge integrated circuit with level shifting input control where all complementary metal oxide semiconductor (CMOS) components have been replaced with N- and P-channel double diffused metal oxide semiconductor (DMOS) components. A low cost half bridge driver IC fabricated in the process technology with a minimum or reduced number of masking steps to implement all the blocks and without the use of the low threshold voltage CMOS. The half bridge driver IC uses a universal 12 Volt supply for all of the blocks with reference to the ground or to the half bridge output. Furthermore, the low differential current from high voltage level shifter transistors of the half bridge driver IC can provide enough voltage swing to set or reset the latch when high threshold voltage DMOS transistors are used in the pulse filter.