TDDB test pattern and method for testing TDDB of MOS capacitor dielectric

1. Field of the Invention TDDB test pattern which can reduce a test time period and improve a precision of a measurement result statistically; and a method for testing TDDBs of MOS capacitor dielectric films using the same, the TDDB test pattern including a plurality of unit test pattern cells each having an MOS capacitor, an MOS transistor, and a fuse for controlling operations of the MOS capacitor and the MOS transistor, a first voltage supplying unit for supplying a stress voltage to the MOS capacitor and the MOS transistor in each unit test pattern cell on the same time, an ammeter for continuous measurement of a total current from the plurality of unit test pattern cells, to measure a total time to breakdown of the plurality of unit test pattern cells, a plurality of VFN's (Voltage Forcing Nodes) each positioned between the first voltage supplying unit and the fuse in the unit test pattern cell, a DCMN (Drain Current Measuring Node) positioned between the ammeter and a drain terminal of the MOS transistor in each of the plurality of unit test pattern cells, and a second voltage supplying unit for applying a voltage to the drain terminal of the MOS transistor.